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2SC5337-T1-AZ

更新时间： 2024-10-30 12:33:15
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管射频小信号双极晶体管
页数 文件大小 规格书
7页 104K
描述
NPN Silicon RF Transistor for High-Frequency

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中文翻译

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2SC5337-T1-AZ 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliant风险等级：5.8
Is Samacsys：N最大集电极电流 (IC)：0.25 A
配置：Single最小直流电流增益 (hFE)：60
最高工作温度：150 °C极性/信道类型：NPN
最大功率耗散 (Abs)：2 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

2SC5337-T1-AZ 数据手册

 浏览型号2SC5337-T1-AZ的Datasheet PDF文件第2页浏览型号2SC5337-T1-AZ的Datasheet PDF文件第3页浏览型号2SC5337-T1-AZ的Datasheet PDF文件第4页浏览型号2SC5337-T1-AZ的Datasheet PDF文件第5页浏览型号2SC5337-T1-AZ的Datasheet PDF文件第6页浏览型号2SC5337-T1-AZ的Datasheet PDF文件第7页 
Preliminary Data Sheet  
2SC5337  
NPN Silicon RF Transistor for High-Frequency  
Low Distortion Amplifier 4-Pin Power Minimold  
R09DS0047EJ0300  
Rev.3.00  
Sep 14, 2012  
FEATURES  
•
•
Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA  
Low noise  
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz  
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz  
4-pin power minimold package with improved gain from the 2SC4536  
•
<R>  
ORDERING INFORMATION  
Part Number  
2SC5337  
Order Number  
2SC5337-AZ  
Package  
Quantity  
25 pcs (Non reel)  
1 kpcs/reel  
Supplying Form  
4-pin power  
minimold  
(Pb-Free) Note  
• Magazine case  
• 12 mm wide embossed taping  
• Collector face the perforation side of the tape  
2SC5337-T1  
2SC5337-T1-AZ  
Note Contains Lead in the part except the electrode terminals.  
Remark To order evaluation samples, please contact your nearby sales office.  
Unit sample quantity is 25 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
30  
15  
V
3.0  
V
250  
mA  
W
Note  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Ptot  
2.0  
Tj  
150  
°C  
°C  
Tstg  
−65 to +150  
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)  
CAUTION  
Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
R09DS0047EJ0300 Rev.3.00  
Sep 14, 2012  
Page 1 of 5  
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中文翻译

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2SC5337-T1-QQ RENESAS

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2SC5337YQR-AZ RENESAS

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2SC5337YQS-T1-AZ RENESAS

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 		NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
2SC5338 NEC

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 		NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

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