Datasheet > 2SC5338SH-T1

2SC5338SH-T1

更新时间： 2024-10-31 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	53K
描述
TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 150MA I(C) \| TO-243VAR

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2SC5338SH-T1 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5338

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

4-PIN POWER MINIMOLD

FEATURES

•

High gain:

21e ²= 10 dB TYP. @ V^CE= 5 V, I^C= 50 mA, f = 1 GHz

Low distortion, low voltage: IM²= −55 dB TYP., IM³= −76 dB TYP. @ V^CE= 5 V, I^C= 50 mA, Vⁱⁿ= 105 dBµV/75Ω

4-pin power minimold package with improved gain from the 2SC4703

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5338

25 pcs (Non reel)

1 kpcs/reel

• Magazine case

2SC5338-T1

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

2.5

150

tot ^Note

1.8

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to +150

Note Mounted on 16 cm²× 0.7 mm (t) ceramic substrate (Copper plating)

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P10940EJ2V0DS00 (2nd edition)

Date Published August 2001 NS CP(K)

The mark • shows major revised points.

1996, 2001

Printed in Japan

12 3 4 5 6 7 8

中文翻译

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与2SC5338SH-T1相关器件

型号	品牌	获取价格	描述	数据表
2SC5338-T1	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
2SC5338-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338-T1SE	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338-T1-SE	RENESAS	获取价格	暂无描述
2SC5338-T1SE-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338-T1SF	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338-T1SF-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338-T1SH	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338-T1SH-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili