Datasheet > 2SC5337YQR-AZ

2SC5337YQR-AZ

更新时间： 2024-11-25 05:23:03

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	92K
描述
TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243

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技术参数
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2SC5337YQR-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
最大集电极电流 (IC)：	0.25 A	配置：	Single
最小直流电流增益 (hFE)：	60	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SC5337YQR-AZ 数据手册

Preliminary Data Sheet

2SC5337

NPN Silicon RF Transistor for High-Frequency

Low Distortion Amplifier 4-Pin Power Minimold

R09DS0047EJ0300

Rev.3.00

Sep 14, 2012

FEATURES

•

Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA

Low noise

NF = 1.5 dB TYP. @ V^CE= 10 V, IC = 50 mA, f = 500 MHz

NF = 2.0 dB TYP. @ V^CE= 10 V, IC = 50 mA, f = 1 GHz

4-pin power minimold package with improved gain from the 2SC4536

•

<R>

ORDERING INFORMATION

Part Number

2SC5337

Order Number

2SC5337-AZ

Package

Quantity

25 pcs (Non reel)

1 kpcs/reel

Supplying Form

4-pin power

minimold

(Pb-Free) ^Note

• Magazine case

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

2SC5337-T1

2SC5337-T1-AZ

Note Contains Lead in the part except the electrode terminals.

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

3.0

250

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

2.0

150

°C

Tstg

−65 to +150

Note Mounted on 16 cm²× 0.7 mm (t) ceramic substrate (Copper plating)

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0047EJ0300 Rev.3.00

Sep 14, 2012

Page 1 of 5

12 3 4 5 6 7

中文翻译

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与2SC5337YQR-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SC5337YQS-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243
2SC5338	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
2SC5338	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
2SC5338(NE462M02)	ETC	获取价格	Discrete
2SC5338-A	RENESAS	获取价格	RF & Microwave device
2SC5338SE	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 150MA I(C) \| TO-243VAR
2SC5338-SE	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338-SE	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4
2SC5338-SE-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338SE-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,150MA I(C),TO-243VAR

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