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2SC5338-SE

更新时间： 2024-02-14 06:44:01

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
10页	73K
描述
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4

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中文翻译

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技术参数
数据手册

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2SC5338-SE 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	0.15 A
配置：	Single	最小直流电流增益 (hFE)：	50
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1.8 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SC5338-SE 数据手册

DATA SHEET

PRELIMINARY DATA SHEET

Silicon Transistor

2SC5338

NPN EPITAXIAL SILICON TRANSISTOR

HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DESCRIPTION

The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply

voltage (V_CE= 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such.

FEATURES

PACKAGE DIMENSIONS

•

High gain

(in millimeters)

|S₂₁|²= 10 dB TYP., @V_CE= 5 V, Ic = 50 mA, f = 1 GHz

4.5±0.1

•

Low distortion and low voltage

1.6±0.2

1.5±0.1

−

IM₂= 55 dB TYP., IM₃= 76 dB TYP.

Ω

@V_CE= 5 V, Ic = 50 mA, V_in= 105 dB V/75

•

New power mini-mold package version of a 4-pin type

gain-improved on the 2SC4703

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C)

0.42

±0.06

0.42

±0.06

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

0.25±0.02

1.5

3.0

0.46

±0.06

2.5

150

Note1

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

Total Power Dissipation

Junction Temperature

Storage Temperature

P_T

1.8

T_j

150

°C

T_stg

–65 to +150

Note 1

. 0.7 mm 16 cm double sided ceramic substrate (Copper plaiting)

Document No. P10940EJ1V0DS00 (1st edition)

Date Published April 1996 P

Printed in Japan

1996

12 3 4 5 6 7...10

中文翻译

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与2SC5338-SE相关器件

型号	品牌	获取价格	描述	数据表
2SC5338-SE-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338SE-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,150MA I(C),TO-243VAR
2SC5338SE-T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 150MA I(C) \| TO-243VAR
2SC5338SF	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 150MA I(C) \| TO-243VAR
2SC5338-SF	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338-SF	RENESAS	获取价格	暂无描述
2SC5338-SF-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338SF-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,150MA I(C),TO-243VAR
2SC5338SF-T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 150MA I(C) \| TO-243VAR
2SC5338SH	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 150MA I(C) \| TO-243VAR