Datasheet > 2SC5338-T1SE

2SC5338-T1SE

更新时间： 2024-11-24 15:25:11

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	51K
描述
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4

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2SC5338-T1SE 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5338

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

4-PIN POWER MINIMOLD

FEATURES

•

High gain:

21e ²= 10 dB TYP. @ V^CE= 5 V, I^C= 50 mA, f = 1 GHz

Low distortion, low voltage: IM²= −55 dB TYP., IM³= −76 dB TYP. @ V^CE= 5 V, I^C= 50 mA, Vⁱⁿ= 105 dBµV/75Ω

4-pin power minimold package with improved gain from the 2SC4703

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5338

25 pcs (Non reel)

1 kpcs/reel

• Magazine case

2SC5338-T1

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

2.5

150

tot ^Note

1.8

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to +150

Note Mounted on 16 cm²× 0.7 mm (t) ceramic substrate (Copper plating)

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P10940EJ2V0DS00 (2nd edition)

Date Published August 2001 NS CP(K)

The mark • shows major revised points.

1996, 2001

Printed in Japan

12 3 4 5 6 7 8

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