Datasheet > 2SC5342SF

2SC5342SF

更新时间： 2024-11-17 07:31:11

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	36K
描述
NPN Silicon Transistor

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中文翻译

获取价格

数据手册

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2SC5342SF 数据手册

SMD Type

TransistIoCrs

NPN Silicon Transistor

2SC5342SF

SOT-23

Unit: mm

+0.1

2.9

-0.1

Features

+0.1

0.4

-0.1

Large collector current: IC=500mA.

Low collector saturation voltage enabling low-voltage operation.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

500

Collector dissipation

Junction temperature

Storage temperature

P^C

200

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOIC=100ìA , IE=0

BV^CEOIC=1mA , IB=0

BV^EBOIE=10ìA, IC=0

I^CBO

I^EBO

h^FE

VCB=40V, IE=0

VEB=5V, IC=0

0.1

ìA

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

VCE=1V, IC=-100mA

240

0.25

V^CE(sat)IC/IB=100mA/10mA

f^T

VCE=6V, IE=-20mA,

300

7.5

MHz

Output capacitance

C^ob

VCB=6V, IE=0, f=1MHz

hFE Classification

Marking

Rank

hFE

70 140

120 240

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