Datasheet > 2SC5339_2015

2SC5339_2015

更新时间： 2024-11-25 01:18:51

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	83K
描述
Silicon NPN Power Transistors

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2SC5339_2015 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SC5339

DESCRIPTION

·With TO-3P(H)IS package

·High speed

·High voltage

·Low saturation voltage

·Bult-in damper type

APPLICATIONS

·Horizontal deflection output for medium

resolution display,colorTV

·High speed switching applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3P(H)IS) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

V_CBO

Collector-base voltage

1500

V_CEO

V_EBO

I_C

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

600

Open collector

I_CM

I_B

Collector current-Peak

Base current

3.5

P_C

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

JMnic

12 3

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2SC5342M	AUK	获取价格	NPN Silicon Transistor (Medium power amplifier)
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2SC5342MO	KODENSHI	获取价格	Transistor,
2SC5342MY	KODENSHI	获取价格	TRANSISTOR,BJT,NPN,32V V(BR)CEO,500MA I(C),TO-92VAR
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2SC5342NO	KODENSHI	获取价格	Transistor,
2SC5342NY	KODENSHI	获取价格	Transistor,