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2SC5342UY PDF预览

2SC5342UY

更新时间: 2024-11-17 21:09:19
品牌 Logo 应用领域
可天士 - KODENSHI /
页数 文件大小 规格书
4页 188K
描述
Transistor,

2SC5342UY 数据手册

 浏览型号2SC5342UY的Datasheet PDF文件第2页浏览型号2SC5342UY的Datasheet PDF文件第3页浏览型号2SC5342UY的Datasheet PDF文件第4页 
2SC5342U  
NPN Silicon Transistor  
Description  
PIN Connection  
Medium power amplifier  
Features  
C
Large collector current : IC=500mA  
Low collector saturation voltage enabling  
low-voltage operation  
B
E
Complementary pair with 2SA1979U  
SOT-323  
Ordering Information  
Type NO.  
Marking  
Package Code  
2SC5342U  
B
SOT-323  
: hFE rank  
Absolute maximum ratings  
Characteristic  
(Ta=25°C)  
Symbol  
Ratings  
40  
Unit  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
IC  
V
V
32  
5
V
500  
mA  
mW  
°C  
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
200  
Tj  
150  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
(Ta=25°C)  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Test Condition  
Min. Typ. Max. Unit  
Collector-Base breakdown voltage  
IC=100μA, IE=0  
40  
32  
5
-
-
-
-
-
-
-
-
V
V
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
IC=1mA, IB=0  
IE=10μA, IC=0  
-
V
VCB=40V, IE=0  
-
0.1  
0.1  
240  
0.25  
-
μA  
μA  
-
Emitter cut-off current  
IEBO  
VEB=5V, IC=0  
-
*
DC current gain  
VCE=1V, IC=100mA  
IC=100mA, IB=10mA  
VCE=6V, IC=20mA  
VCB=6V, IE=0, f=1MHz  
70  
-
hFE  
Collector-Emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
V
-
300  
7.0  
MHz  
pF  
Collector output capacitance  
Cob  
-
-
* : hFE Rank  
/ O : 70~140, Y : 120~240  
KSD-T5D024-000  
1

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