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2SC5343 PDF预览

2SC5343

更新时间: 2024-11-18 14:55:39
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1833K
描述
SOT-23

2SC5343 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
2SC5343 TRANSISTOR (NPN)  
SOT-23  
FEATURES  
z
Excellent hFE Linearity  
Low Noise  
z
1. BASE  
MARKING  
2. EMITTER  
3. COLLECTOR  
5343= Device code  
Solid dot = Green molding compound device.  
5343  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
60  
V
Collector-Emitter Voltage  
50  
V
Emitter-Base Voltage  
5
Collector Current  
150  
200  
625  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
PC  
RΘJA  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
Min  
60  
50  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=100μA,IE=0  
V(BR)CEO IC=10mA,IB=0  
V(BR)EBO IE=10μA,IC=0  
V
V
ICBO  
IEBO  
VCB=60V,IE=0  
0.1  
0.1  
μA  
μA  
Emitter cut-off current  
VEB=5V,IC=0  
DC current gain  
hFE(1)  
VCE(sat)  
fT  
VCE=6V,IC=2mA  
IC=100mA,IB=10mA  
VCE=10V,IC=1mA  
VCB=10V,IE=0,f=1MHz  
70  
80  
700  
0.25  
Collector-emitter saturation voltage  
Transition frequency  
0.1  
V
MHz  
pF  
Collector output capacitance  
Cob  
3.5  
10  
VCE=6V,IC=0.1mA,  
Noise figure  
NF  
dB  
f=1kHz,Rg=10kΩ  
CLASSIFICATION OF hFE  
O
Y
G
L
Rank  
70-140  
120-240  
200-400  
300-700  
Range  
www.jscj-elec.com  
1
Rev. - 2.1  

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