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2SC5343EO PDF预览

2SC5343EO

更新时间: 2024-11-30 13:04:19
品牌 Logo 应用领域
可天士 - KODENSHI 放大器
页数 文件大小 规格书
4页 226K
描述
暂无描述

2SC5343EO 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:N最大集电极电流 (IC):0.15 A
配置:Single最小直流电流增益 (hFE):70
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SC5343EO 数据手册

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2SC5343  
NPN Silicon Transistor  
Description  
General small signal amplifier  
PIN Connection  
C
E
B
Features  
Low collector saturation voltage  
: VCE(sat)=0.25V(Max.)  
Low output capacitance : Cob=2pF(Typ.)  
Complementary pair with 2SA1980  
TO-92  
Ordering Information  
Type NO.  
Marking  
Package Code  
2SC5343  
C5343  
TO-92  
Absolute maximum ratings  
Characteristic  
Ta=25°C  
Symbol  
Ratings  
60  
Unit  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
IC  
V
V
50  
5
V
150  
mA  
mW  
°C  
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
500  
Tj  
150  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
Ta=25°C  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Test Condition  
Min. Typ. Max. Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
IC=100μA, IE=0  
60  
50  
5
-
-
-
-
-
-
-
-
2
-
V
IC=1mA, IB=0  
-
V
IE=10μA, IC=0  
-
V
VCB=60V, IE=0  
-
0.1  
0.1  
700  
0.25  
-
μA  
μA  
-
Emitter cut-off current  
IEBO  
VEB=5V, IC=0  
-
*
DC current gain  
VCE=6V, IC=2mA  
IC=100mA, IB=10mA  
VCE=10V, IC=1mA  
VCB=10V, IE=0, f=1MHz  
70  
-
hFE  
Collector-Emitter saturation voltage  
Transistion frequency  
VCE(sat)  
fT  
V
80  
-
MHz  
pF  
Collector output capacitance  
Cob  
3.5  
VCE=6V, IC=0.1mA,  
f=1KHz, Rg=10KΩ  
Noise figure  
NF  
-
-
10  
dB  
* : hFE rank / O : 70 ~ 140, Y : 120 ~ 240, G : 200 ~ 400, L : 300 ~ 700  
KSD-T0A018-000  
1

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