RoHS
2 S C 5 3 4 3
SOT-23 TRANSISTOR
Dimensions(Unit:mm)
SOT-23
2.3±0.2
GENERAL PURPOSE TRANSISTOR
1.3±0.2
0.5Ref.
0.5Ref.
2
Collector Dissipation:Pc=225mW
Collector-Emitter Voltage:VCEO=40V
NPN Epitaxial Silicon Transistor
3
Marking
1
0.38Ref.
MINO.1
0.01-0.10
1.EMITTER
2.BASE
3.COLLECTOR
Tolerance:0.1mm
(Ta=25oC)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
V
V
V
CBO
CEO
EBO
V
V
60
40
V
Emitter-Base Voltage
Collector Current
6
mA
Ic
200
225
150
-50~150
Pc
mW
Collector Dissipation
Junction Temperature
Storage Temperature
O C
O C
T
T
j
stg
(Ta=25oC)
Electrical Characteristics
Parameter
Symbol MIN. TYP.MAX. Unit
Condition
V
V
40
60
6
BVCEO
BVCBO
BVEBO
I
I
I
C
C
E
=1mA I
=10 A I
=10 A I
B
=0
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cutoff Current
DC Current Gain
E
=0
V
C
=0
I
I
CEO
50
50
nA
nA
V
V
V
V
V
V
V
CB=30V, VEB=3V
EBO
CB=3V, I
CE=1V, I
CE=1V, I
CE=1V, I
CE=1V, I
CE=1V, I
C
C
C
C
C
C
=0
h
h
h
h
h
FE1
FE2
FE3
FE4
FE5
=0.1mA
=1mA
40
70
DC Current Gain
DC Current Gain
300
=10mA
=50mA
=100mA
100
60
DC Current Gain
DC Current Gain
30
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
V
CE(sat)
CE(sat)
BE(sat)
0.2
0.3
V
I
I
I
C
C
C
=10mA, I
=50mA, I
=10mA, I
B
B
B
=1mA
=5mA
=1mA
V
V
0.65
0.85
WEJ ELECTRONIC CO.,LTD
Base-Emitter Saturation Voltage
Output Capacitance
V
C
BE(sat)
ob
0.95
4
V
I
C
=50mA, I
=0,f=1MHz
=10mA,f=100MHz
B
=5mA
V
V
CE=5V, I
C
PF
Current Gain-Bandwidth Product
f
T
300
CE=20V, I
C
MHz
Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC
Pulse Test: Pulse Width 300uS Duty cycle 2%
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WEJ ELECTRONIC CO.