生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.61 |
其他特性: | LOW NOISE | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.25 A | 集电极-发射极最大电压: | 15 V |
配置: | SINGLE | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-F4 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5337-T1QQ-A | NEC |
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RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC5337-T1QR-A | NEC |
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RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC5337-T1QS | NEC |
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RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC5337-T1QS-A | NEC |
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RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC5337YQR-AZ | RENESAS |
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TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243 | |
2SC5337YQS-T1-AZ | RENESAS |
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TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243 | |
2SC5338 | RENESAS |
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NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER | |
2SC5338 | NEC |
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NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER | |
2SC5338(NE462M02) | ETC |
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Discrete | |
2SC5338-A | RENESAS |
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RF & Microwave device |