Datasheet > 2SC5337-T1QS-A

2SC5337-T1QS-A

更新时间： 2024-11-20 14:26:27

品牌	Logo	应用领域
日电电子 - NEC		放大器 ISM频段晶体管
页数	文件大小	规格书
8页	49K
描述
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4

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中文翻译

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技术参数
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2SC5337-T1QS-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	POWER, MINIMOLD PACKAGE-4	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
其他特性：	LOW NOISE	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	0.25 A	集电极-发射极最大电压：	15 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PSSO-F3	JESD-609代码：	e6
湿度敏感等级：	1	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	FLAT
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	10
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

2SC5337-T1QS-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5337

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

4-PIN POWER MINIMOLD

FEATURES

•

Low distortion: IM²= 59.0 dB TYP., IM³= 82.0 dB TYP. @ V^CE= 10 V, I^C= 50 mA

Low noise

NF = 1.5 dB TYP. @ V^CE= 10 V, I^C= 50 mA, f = 500 MHz

NF = 2.0 dB TYP. @ V^CE= 10 V, I^C= 50 mA, f = 1 GHz

4-pin power minimold package with improved gain from the 2SC4536

•

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5337

25 pcs (Non reel)

1 kpcs/reel

• Magazine case

2SC5337-T1

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.0

250

tot ^Note

2.0

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to +150

Note Mounted on 16 cm²× 0.7 mm (t) ceramic substrate (Copper plating)

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P10939EJ2V1DS00 (2nd edition)

Date Published September 2001 NS CP(K)

The mark • shows major revised points.

1996, 2001

Printed in Japan

12 3 4 5 6 7 8

中文翻译

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与2SC5337-T1QS-A相关器件

型号	品牌	获取价格	描述	数据表
2SC5337YQR-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243
2SC5337YQS-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243
2SC5338	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
2SC5338	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
2SC5338(NE462M02)	ETC	获取价格	Discrete
2SC5338-A	RENESAS	获取价格	RF & Microwave device
2SC5338SE	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 150MA I(C) \| TO-243VAR
2SC5338-SE	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5338-SE	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4
2SC5338-SE-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Sili

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