Datasheet > 晶体管 > 射频小信号双极晶体管> 2SC5337-T1

2SC5337-T1

更新时间： 2024-11-20 12:33:15

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体小信号双极晶体管射频小信号双极晶体管放大器
页数	文件大小	规格书
7页	104K
描述
NPN Silicon RF Transistor for High-Frequency

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中文翻译

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技术参数
数据手册

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2SC5337-T1 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.56
Is Samacsys：	N	其他特性：	LOW NOISE
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.25 A
集电极-发射极最大电压：	15 V	配置：	SINGLE
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-F4
元件数量：	1	端子数量：	4
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

2SC5337-T1 数据手册

Preliminary Data Sheet

2SC5337

NPN Silicon RF Transistor for High-Frequency

Low Distortion Amplifier 4-Pin Power Minimold

R09DS0047EJ0300

Rev.3.00

Sep 14, 2012

FEATURES

•

Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA

Low noise

NF = 1.5 dB TYP. @ V^CE= 10 V, IC = 50 mA, f = 500 MHz

NF = 2.0 dB TYP. @ V^CE= 10 V, IC = 50 mA, f = 1 GHz

4-pin power minimold package with improved gain from the 2SC4536

•

<R>

ORDERING INFORMATION

Part Number

2SC5337

Order Number

2SC5337-AZ

Package

Quantity

25 pcs (Non reel)

1 kpcs/reel

Supplying Form

4-pin power

minimold

(Pb-Free) ^Note

• Magazine case

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

2SC5337-T1

2SC5337-T1-AZ

Note Contains Lead in the part except the electrode terminals.

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

3.0

250

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

2.0

150

°C

Tstg

−65 to +150

Note Mounted on 16 cm²× 0.7 mm (t) ceramic substrate (Copper plating)

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0047EJ0300 Rev.3.00

Sep 14, 2012

Page 1 of 5

12 3 4 5 6 7

中文翻译

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与2SC5337-T1相关器件

型号	品牌	获取价格	描述	数据表
2SC5337-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337-T1-AZ	RENESAS	获取价格	NPN Silicon RF Transistor for High-Frequency
2SC5337-T1QQ	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337-T1-QQ	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4
2SC5337-T1QQ-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337-T1QR-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337-T1QS	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337-T1QS-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337YQR-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243
2SC5337YQS-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243

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