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2SC5337-QS

更新时间： 2024-01-21 08:33:40

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器小信号双极晶体管射频小信号双极晶体管
页数	文件大小	规格书
8页	61K
描述
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4

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中文翻译

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技术参数
数据手册

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2SC5337-QS 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
最大集电极电流 (IC)：	0.25 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SC5337-QS 数据手册

DATA SHEET

PRELIMINARY DATA SHEET

Silicon Transistor

2SC5337

NPN EPITAXIAL SILICON TRANSISTOR

HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DESCRIPTION

The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to

UHF band, which is suitable for the CATV, tele-communication, and such.

FEATURES

PACKAGE DIMENSIONS

(in millimeters)

•

Low distortion

IM₂= 59 dB TYP. @V_CE= 10 V, I_C= 50 mA

IM₃= 82 dB TYP. @V_CE= 10 V, I_C= 50 mA

4.5±0.1

1.6±0.2

1.5±0.1

•

Low noise

NF = 1.5 dB TYP. @V_CE= 10 V, I_C= 10 mA, f = 1 GHz

•

New power mini-mold package version of a 4-pin type

gain-improved on the 2SC3356

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C)

0.42

±0.06

0.42

±0.06

0.25±0.02

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

1.5

3.0

0.46

±0.06

3.0

250

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

Note1

Total Power Dissipation

Junction Temperature

Storage Temperature

P_T

2.0

T_j

150

°C

T_stg

–65 to +150

Note 1

. 0.7 mm 16 cm double sided ceramic substrate (Copper plaiting)

Document No. P10939EJ1V0DS00 (1st edition)

Date Published April 1996 P

Printed in Japan

1996

12 3 4 5 6 7 8

中文翻译

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与2SC5337-QS相关器件

型号	品牌	获取价格	描述	数据表
2SC5337-QS-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337QS-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243
2SC5337QS-T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 250MA I(C) \| TO-243
2SC5337QS-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243
2SC5337-T1	RENESAS	获取价格	NPN Silicon RF Transistor for High-Frequency
2SC5337-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337-T1-AZ	RENESAS	获取价格	NPN Silicon RF Transistor for High-Frequency
2SC5337-T1QQ	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337-T1-QQ	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4
2SC5337-T1QQ-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili