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2SC5337-QR-A PDF预览

2SC5337-QR-A

更新时间: 2024-11-20 13:04:19
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器小信号双极晶体管射频小信号双极晶体管
页数 文件大小 规格书
8页 61K
描述
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4

2SC5337-QR-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:POWER, MINIMOLD PACKAGE-4Reach Compliance Code:compliant
风险等级:5.61其他特性:LOW NOISE
外壳连接:COLLECTOR最大集电极电流 (IC):0.25 A
集电极-发射极最大电压:15 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PSSO-F3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SC5337-QR-A 数据手册

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PRELIMINARY DATA SHEET  
Silicon Transistor  
2SC5337  
NPN EPITAXIAL SILICON TRANSISTOR  
HIGH FREQUENCY LOW DISTORTION AMPLIFIER  
DESCRIPTION  
The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to  
UHF band, which is suitable for the CATV, tele-communication, and such.  
FEATURES  
PACKAGE DIMENSIONS  
(in millimeters)  
Low distortion  
IM2 = 59 dB TYP. @VCE = 10 V, IC = 50 mA  
IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA  
4.5±0.1  
1.6±0.2  
1.5±0.1  
Low noise  
NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz  
New power mini-mold package version of a 4-pin type  
C
B
gain-improved on the 2SC3356  
E
E
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
0.42  
±0.06  
0.42  
±0.06  
0.25±0.02  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
1.5  
3.0  
0.46  
±0.06  
30  
15  
V
3.0  
V
250  
mA  
W
PIN CONNECTIONS  
E: Emitter  
C: Collector  
B: Base  
Note1  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
2.0  
Tj  
150  
°C  
°C  
Tstg  
–65 to +150  
2
Note 1  
×
. 0.7 mm 16 cm double sided ceramic substrate (Copper plaiting)  
Document No. P10939EJ1V0DS00 (1st edition)  
Date Published April 1996 P  
Printed in Japan  
©
1996  

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