Datasheet > 2SC4408_07

2SC4408_07

更新时间： 2024-11-18 04:26:03

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器 PC
页数	文件大小	规格书
4页	120K
描述
Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications

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2SC4408_07 数据手册

2SC4408

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC4408

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low saturation voltage: V

= 0.5 V (max) (I = 1 A)

CE (sat) C

High collector power dissipation: P = 900 mW

High-speed switching: t

= 500 ns (typ.)

stg

Complementary to 2SA1680

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

0.2

JEDEC

JEITA

TO-92MOD

Collector power dissipation

Junction temperature

Storage temperature range

900

°C

150

―

stg

−55 to 150

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-10

12 3 4

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