2SC4095

更新时间： 2024-11-17 22:52:43

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器小信号双极晶体管射频小信号双极晶体管微波光电二极管
页数	文件大小	规格书
8页	108K
描述
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

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中文翻译

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技术参数
数据手册

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2SC4095 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.64	Is Samacsys：	N
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.035 A
基于收集器的最大容量：	0.8 pF	集电极-发射极最大电压：	10 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G4	元件数量：	1
端子数量：	4	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	10000 MHz
Base Number Matches：	1

2SC4095 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4095

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC4095 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band.

2SC4095 features excellent power gain with very low-noise figures.

2SC4095 employs direct nitiride passivated base surface process (DNP

process) which is an NEC proprietary new fabrication technique which

provides excellent noise figures at high current values. This allows

excellent associated gain and very wide dynamic range.

(Units: mm)

+0.2

−0.3

+0.2

−0.1

2.8

1.5

FEATURES

•

NF = 1.8 dB TYP. @ f = 2.0 GHz, V^CE= 6 V, I^C= 5 mA

S^21e²= 9.5 dB TYP. @ f = 2.0 GHz, V^CE= 6 V, I^C= 10 mA

5°

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

5°

1.5

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

200

T^j

150

T^stg

65 to +150

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

I^CBO

I^EBO

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

1.0

250

V^CB= 10 V, I^E= 0

V^EB= 1 V, I^C= 0

h^FE

100

V^CE= 6 V, I^C= 10 mA

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Maximum Available Gain

Noise Figure

f^T

GHz

V^CE= 6 V, I^C= 10 mA f = 1.0 GHz

V^CB= 10 V, I^E= 0, f = 1.0 MHz

V^CE= 6 V, I^C= 10 mA, f = 2.0 GHz

V^CE= 6 V, I^C= 5 mA, f = 2.0 GHz

C^re

0.25

9.5

0.8

3.0

S^21e

7.5

MAG

1.8

h^FEClassification

Class

Marking

h^FE

R46/RDF *

R46

R47/RDG *

R48/RDH *

R48

R47

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

Document No. P10367EJ2V1DS00 (2nd edition)

Date Published March 1997 N

Printed in Japan

1987

12 3 4 5 6 7 8

中文翻译

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与2SC4095相关器件

型号	品牌	获取价格	描述	数据表
2SC4095(NE68039E)	ETC	获取价格	Discrete
2SC4095-R46	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-R47	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-R47-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-R48	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-R48-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-RDF	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-RDF-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-RDG	NEC	获取价格	暂无描述
2SC4095-RDG-A	NEC	获取价格	暂无描述

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