Datasheet > 2SC4095(NE68039E)

2SC4095(NE68039E)

更新时间： 2024-11-17 23:20:19

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
8页	97K
描述
Discrete

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC4095(NE68039E) 数据手册

浏览型号2SC4095(NE68039E)的Datasheet PDF文件第2页

浏览型号2SC4095(NE68039E)的Datasheet PDF文件第3页

浏览型号2SC4095(NE68039E)的Datasheet PDF文件第4页

浏览型号2SC4095(NE68039E)的Datasheet PDF文件第5页

浏览型号2SC4095(NE68039E)的Datasheet PDF文件第6页

DATA SHEET

SILICON TRANSISTOR

2SC4095

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC4095 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band.

2SC4095 features excellent power gain with very low-noise figures.

2SC4095 employs direct nitiride passivated base surface process (DNP

process) which is an NEC proprietary new fabrication technique which

provides excellent noise figures at high current values. This allows

excellent associated gain and very wide dynamic range.

(Units: mm)

+0.2

−0.3

+0.2

−0.1

2.8

1.5

FEATURES

•

NF = 1.8 dB TYP. @ f = 2.0 GHz, V^CE= 6 V, I^C= 5 mA

S^21e²= 9.5 dB TYP. @ f = 2.0 GHz, V^CE= 6 V, I^C= 10 mA

5°

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

5°

1.5

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

200

T^j

150

T^stg

65 to +150

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

I^CBO

I^EBO

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

1.0

250

V^CB= 10 V, I^E= 0

V^EB= 1 V, I^C= 0

h^FE

100

V^CE= 6 V, I^C= 10 mA

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Maximum Available Gain

Noise Figure

f^T

GHz

V^CE= 6 V, I^C= 10 mA f = 1.0 GHz

V^CB= 10 V, I^E= 0, f = 1.0 MHz

V^CE= 6 V, I^C= 10 mA, f = 2.0 GHz

V^CE= 6 V, I^C= 5 mA, f = 2.0 GHz

C^re

0.25

9.5

0.8

3.0

S^21e

7.5

MAG

1.8

h^FEClassification

Class

Marking

h^FE

R46/RDF *

R46

R47/RDG *

R48/RDH *

R48

R47

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

Document No. P10367EJ2V1DS00 (2nd edition)

Date Published March 1997 N

Printed in Japan

1987

12 3 4 5 6 7 8

中文翻译

下载PDF

与2SC4095(NE68039E)相关器件

型号	品牌	获取价格	描述	数据表
2SC4095-R46	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-R47	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-R47-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-R48	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-R48-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-RDF	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-RDF-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-RDG	NEC	获取价格	暂无描述
2SC4095-RDG-A	NEC	获取价格	暂无描述
2SC4095-RDH	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil

与2SC4095(NE68039E)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC4095(NE68039E)

2SC4095(NE68039E) 数据手册

与2SC4095(NE68039E)相关器件

与2SC4095(NE68039E)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC4095(NE68039E)

2SC4095(NE68039E) 数据手册

与2SC4095(NE68039E)相关器件

与2SC4095(NE68039E)相关文章

您还可以找

您在本页遇到什么问题？