Datasheet > 2SC4097

2SC4097

更新时间： 2024-11-19 14:54:15

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	798K
描述
双极型晶体管

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SC4097 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	32
Collector Current - Continuous：	0.5	DC current gain - Min：	82
DC current gain - Max：	390	Transition frequency：	250
Package：	SOT-323	Storage Temperature Range：	-55-150
class：	Transistors

2SC4097 数据手册

2SC4097

SOT-323 Transistor(NPN)

1. BASE

SOT-323

2. EMITTER

3. COLLECTOR

Features

High I_CMax. I_CMax=0.5A

Low V_CE(sat).Optimal for low voltage operation.

Complements the 2SA1577

MAXIMUM RATINGS (T_A=25℃unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Dimensions in inches and (millimeters)

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

500

200

150

-55-150

℃

P_C

T_J

T_stg

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=100μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=20V,I_E=0

V_EB=4V,I_C=0

μA

Emitter cut-off current

DC current gain

V_CE=3V,I_C=10mA

390

0.4

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=100mA, I_B=10mA

V_CE=5V, I_C=20mA,f =100MHz

V_CB=10V,I_E=0,f=1MHZ

250

MHz

Collector Output Capacitance

Cob

CLASSIFICATION OF h_FE

Rank

Range

82-180

120-270

180-390

MARKING

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

下载PDF

与2SC4097相关器件

型号	品牌	获取价格	描述	数据表
2SC4097_11	SECOS	获取价格	NPN Plastic-Encapsulate Transistor
2SC4097_15	WINNERJOIN	获取价格	NPN TRANSISTOR
2SC4097FRAT106Q	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, S
2SC4097FRAT106R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, S
2SC4097P	ROHM	获取价格	TRANSISTOR \| BJT \| NPN \| 32V V(BR)CEO \| 500MA I(C) \| SC-70
2SC4097-P	MCC	获取价格	NPN Silicon Epitaxial Transistors
2SC4097PT	CHENMKO	获取价格	Medium Power NPN Transistor
2SC4097-P-T	MCC	获取价格	Transistor
2SC4097-P-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
2SC4097-P-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), NPN,