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2SC4097FRAT106R PDF预览

2SC4097FRAT106R

更新时间: 2024-11-18 19:44:19
品牌 Logo 应用领域
罗姆 - ROHM 光电二极管晶体管
页数 文件大小 规格书
4页 963K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN

2SC4097FRAT106R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.63最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN参考标准:AEC-Q101
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

2SC4097FRAT106R 数据手册

 浏览型号2SC4097FRAT106R的Datasheet PDF文件第2页浏览型号2SC4097FRAT106R的Datasheet PDF文件第3页浏览型号2SC4097FRAT106R的Datasheet PDF文件第4页 
2SC4097FRA  
Transistors  
Medium Power Transistor (32V, 0.5A) AEC-Q101 Qualified  
2SC4097FRA  
zFeatures  
zExternal dimensions (Units : mm)  
1) High ICMax.  
ICMax. = 0.5A  
2SC4097FRA  
2) Low VCE(sat).  
Optimal for low voltage operation.  
3) Complements the 22SA1577FRA  
2.0 0.2  
1.3 0.1  
0.9 0.1  
0.7 0.1  
0.65 0.65  
(1) (2)  
0.2  
0 ~ 0.1  
(3)  
zStructure  
Epitaxial planar type  
NPN silicon transistor  
All terminals have same dimensions  
+0.1  
0.3  
0.15 0.05  
0  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : UMT3  
EIAJ : SC-70  
Abbreviated symbol : C∗  
Denotes hFE  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
40  
32  
V
5
0.5  
V
I
C
A
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
0.2  
W
°C  
°C  
Tj  
150  
Tstg  
55 to +150  
PC must not be exceeded.  
Rev.A  
1/3  

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