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2SC4097Q PDF预览

2SC4097Q

更新时间: 2024-11-17 23:20:19
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
3页 77K
描述
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 500MA I(C) | SC-70

2SC4097Q 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.64
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SC4097Q 数据手册

 浏览型号2SC4097Q的Datasheet PDF文件第2页浏览型号2SC4097Q的Datasheet PDF文件第3页 
2SC2411K / 2SC4097 / 2SC1741S  
Transistors  
Medium Power Transistor (32V, 0.5A)  
2SC2411K / 2SC4097 / 2SC1741S  
!Features  
!External dimensions (Units : mm)  
CMax  
1) High I  
.
2SC2411K  
2SC4097  
I
.
CMax =  
0.5mA  
2.9 0.2  
CE(sat)  
2) Low V  
.
+0.2  
2.0 0.2  
1.3 0.1  
1.1  
0.1  
1.9 0.2  
0.9 0.1  
0.7 0.1  
0.8 0.1  
0.95 0.95  
Optimal for low voltage operation.  
3) Complements the  
0.65 0.65  
(1) (2)  
0.2  
(2)  
(1)  
0 0.1  
0 0.1  
2SA1036K / 2SA1577 / 2SA854S.  
(3)  
(3)  
All terminals have same dimensions  
All terminals have same dimensions  
+0.1  
+0.1  
0.3  
0.15  
0.15 0.05  
0  
+0.1  
0.06  
0.4  
0.05  
!Structure  
Epitaxial planar type  
NPN silicon transistor  
(1) Emitter  
(2) Base  
(3) Collector  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : SMT3  
EIAJ : SC-59  
ROHM : UMT3  
EIAJ : SC-70  
Abbreviated symbol : C*  
Abbreviated symbol : C*  
2SC1741S  
4
0.2  
2 0.2  
+
0.15  
0.45  
0.05  
+
0.15  
+
0.4  
0.45  
2.5  
0.5  
0.05  
0.1  
5
(1) (2) (3)  
(1) Emitter  
(2) Collector  
(3) Base  
ROHM : SPT  
EIAJ : SC-72  
Denotes hFE  
*
!Absolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
40  
32  
V
5
0.5  
V
I
C
A
*
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
0.2  
W
°C  
°C  
Tj  
150  
Tstg  
55 ∼ +150  
PC must not be exceeded.  
*

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