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2SC4097T106/PQ PDF预览

2SC4097T106/PQ

更新时间: 2024-11-21 13:02:59
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
4页 66K
描述
500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SC4097T106/PQ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.26最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):82JESD-30 代码:R-PDSO-G3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN SILVER COPPER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
VCEsat-Max:0.4 VBase Number Matches:1

2SC4097T106/PQ 数据手册

 浏览型号2SC4097T106/PQ的Datasheet PDF文件第2页浏览型号2SC4097T106/PQ的Datasheet PDF文件第3页浏览型号2SC4097T106/PQ的Datasheet PDF文件第4页 
2SC4097  
Transistors  
Medium Power Transistor (32V, 0.5A)  
2SC4097  
zFeatures  
zExternal dimensions (Units : mm)  
1) High ICMax.  
ICMax. = 0.5A  
2SC4097  
2) Low VCE(sat).  
Optimal for low voltage operation.  
3) Complements the 2SA1577.  
2.0 0.2  
0.9 0.1  
0.7 0.1  
1.3 0.1  
0.65 0.65  
(1) (2)  
0.2  
0 ~ 0.1  
(3)  
zStructure  
Epitaxial planar type  
NPN silicon transistor  
All terminals have same dimensions  
+0.1  
0.3  
0.15 0.05  
0  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : UMT3  
EIAJ : SC-70  
Abbreviated symbol : C∗  
Denotes hFE  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
40  
32  
V
5
0.5  
V
I
C
A
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
0.2  
W
°C  
°C  
Tj  
150  
Tstg  
55 to +150  
PC must not be exceeded.  
Rev.A  
1/3  

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