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2SC4097-P PDF预览

2SC4097-P

更新时间: 2024-11-06 07:30:51
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管
页数 文件大小 规格书
3页 213K
描述
NPN Silicon Epitaxial Transistors

2SC4097-P 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.4最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):82JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

2SC4097-P 数据手册

 浏览型号2SC4097-P的Datasheet PDF文件第2页浏览型号2SC4097-P的Datasheet PDF文件第3页 
M C C  
2SC4097-P  
2SC4097-Q  
2SC4097-R  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
High Icmax. Icmax=0.5A  
Low VCE(SAT). Optimal for low voltage operation.  
NPN Silicon  
Epitaxial Transistors  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Maximum Ratings  
Symbol  
VCEO  
VCBO  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Rating  
Unit  
V
V
32  
40  
5
SOT-323  
A
VEBO  
V
D
IC  
PC  
TJ, TSTG  
Collector Current  
Collector power dissipation  
Junction and Storage Temperature  
500  
200  
-55 to +150  
mA  
mW  
R
C
C
B
Electrical Characteristics @ 25R Unless Otherwise Specified  
Symbol  
E
B
Parameter  
Collector -base breakdown voltage  
Min  
Typ  
Max  
Units  
F
E
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
40  
V
(IC=100µA, IE= 0)  
Collector-emitter breakdown voltage  
(IC=-1mA, IB= 0)  
32  
5
V
V
H
G
J
Emitter-base breakdown voltage  
(IE=100µA, Ic= 0)  
K
Collector cut-off current  
(VCB=20V,IE=0)  
ICBO  
1
DIMENSIONS  
µA  
µA  
INCHES  
MM  
DIM  
MIN  
.071  
.045  
.079  
MAX  
.087  
.053  
.087  
MIN  
MAX  
2.20  
1.35  
2.20  
NOTE  
Emitter cut-off current  
(VEB=4V, Ic= 0)  
IEBO  
1
A
B
C
D
E
F
G
H
J
1.80  
1.15  
2.00  
DC Current Gain  
(VCE=3V,IC=10mA)  
.026 Nominal  
0.65Nominal  
1.20  
.30  
hFE  
82  
390  
0.4  
.047  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.012  
.000  
.035  
.004  
.012  
.000  
.90  
.100  
.30  
.100  
1.00  
.250  
.40  
Collector-emitter saturation voltage  
(IC=100mA, IB=10mA)  
VCE(sat)  
V
K
Collector Output Capacitance  
(VCB=10V, IE=0, f=1.0MHz)  
Cob  
6
pF  
Suggested Solder  
Pad Layout  
0.70  
Transition frequency  
(VCE=5V, Ic=20mA,f=100MHz)  
fT  
250  
MHz  
0.90  
h
FE CLASSIFICATION  
Rank  
Ramge  
Marking  
P
Q
R
mm  
1.90  
82~180  
CP  
120~270  
CQ  
180~390  
CR  
0.65  
0.65  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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