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2SC4097 PDF预览

2SC4097

更新时间: 2024-11-18 06:25:39
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
2页 83K
描述
Medium Power Transistor

2SC4097 数据手册

 浏览型号2SC4097的Datasheet PDF文件第2页 
SMD Type  
Transistors  
Medium Power Transistor  
2SC4097  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
High ICMax.  
ICMax. = 0.5A  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
Low VCE(sat).  
+0.1  
-0.1  
1.9  
Optimal for low voltage operation.  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
40  
32  
V
5
0.5  
V
Collector current  
A
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
0.2  
W
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector cutoff current  
Emitter cutoff current  
DC Current Gain  
Symbol  
Testconditons  
Min  
40  
32  
5
Typ  
Max  
Unit  
V
VCBO  
VCEO  
VEBO  
ICBO  
IEBO  
hFE  
IC = 100ìA  
IC = 1mA  
V
IE = 100ìA  
VCB = 20V  
VEB = 4V  
V
1
1
A
A
VCE = 3V, IC = 10mA  
120  
390  
0.6  
Collector-emitter saturation voltage  
Output capacitance  
VCE(sat) IC/IB = 500mA/50mA  
V
Cob  
fT  
VCB = 10V, IE = 0A, f = 1MHz  
VCE = 5V, IE = -20mA, f = 100MHz  
6.5  
pF  
Transition frequency  
250  
MHz  
hFE Classification  
Marking  
hFE  
CQ  
CR  
120 270  
180 390  
1
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