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2SC4095-R48-A PDF预览

2SC4095-R48-A

更新时间: 2024-11-18 14:46:19
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
8页 95K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-4

2SC4095-R48-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:MINIMOLD PACKAGE-4Reach Compliance Code:compliant
风险等级:5.64最大集电极电流 (IC):0.035 A
基于收集器的最大容量:0.8 pF集电极-发射极最大电压:10 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):10000 MHzBase Number Matches:1

2SC4095-R48-A 数据手册

 浏览型号2SC4095-R48-A的Datasheet PDF文件第2页浏览型号2SC4095-R48-A的Datasheet PDF文件第3页浏览型号2SC4095-R48-A的Datasheet PDF文件第4页浏览型号2SC4095-R48-A的Datasheet PDF文件第5页浏览型号2SC4095-R48-A的Datasheet PDF文件第6页浏览型号2SC4095-R48-A的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
2SC4095  
MICROWAVE LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
4 PINS MINI MOLD  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SC4095 is an NPN epitaxial silicon transistor designed for use in  
low-noise and small signal amplifiers from VHF band to UHF band.  
2SC4095 features excellent power gain with very low-noise figures.  
2SC4095 employs direct nitiride passivated base surface process (DNP  
process) which is an NEC proprietary new fabrication technique which  
provides excellent noise figures at high current values. This allows  
excellent associated gain and very wide dynamic range.  
(Units: mm)  
+0.2  
0.3  
+0.2  
0.1  
2.8  
1.5  
FEATURES  
NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA  
S21e 2 = 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA  
5°  
5°  
5°  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
10  
V
V
5°  
1.5  
V
PIN CONNECTIONS  
1. Collector  
2. Emitter  
3. Base  
4. Emitter  
35  
mA  
mW  
C
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
200  
Tj  
150  
Tstg  
65 to +150  
C
ELECTRICAL CHARACTERISTICS (TA = 25 C)  
CHARACTERISTIC  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
SYMBOL  
ICBO  
IEBO  
MIN.  
TYP.  
MAX.  
UNIT  
A
TEST CONDITIONS  
1.0  
1.0  
250  
VCB = 10 V, IE = 0  
A
VEB = 1 V, IC = 0  
hFE  
50  
100  
10  
VCE = 6 V, IC = 10 mA  
Gain Bandwidth Product  
Feed-Back Capacitance  
Insertion Power Gain  
Maximum Available Gain  
Noise Figure  
fT  
GHz  
pF  
VCE = 6 V, IC = 10 mA f = 1.0 GHz  
VCB = 10 V, IE = 0, f = 1.0 MHz  
VCE = 6 V, IC = 10 mA, f = 2.0 GHz  
VCE = 6 V, IC = 10 mA, f = 2.0 GHz  
VCE = 6 V, IC = 5 mA, f = 2.0 GHz  
Cre  
0.25  
9.5  
12  
0.8  
3.0  
2
S21e  
7.5  
dB  
MAG  
NF  
dB  
1.8  
dB  
hFE Classification  
Class  
Marking  
hFE  
R46/RDF *  
R46  
R47/RDG *  
R48/RDH *  
R48  
R47  
50 to 100  
80 to 160  
125 to 250  
* Old Specification / New Specification  
Document No. P10367EJ2V1DS00 (2nd edition)  
Date Published March 1997 N  
Printed in Japan  
©
1987  

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