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2SC4097 PDF预览

2SC4097

更新时间: 2024-11-18 12:54:39
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 129K
描述
TRANSISTOR(NPN)

2SC4097 数据手册

  
RoHS  
2SC4097  
SOT-323  
2SC4097 TRANSISTOR(NPN)  
1. BASE  
2. EMITTER  
FEATURES  
1. 25¡ À0. 05  
3. COLLECTOR  
Power dissipation  
PCM:  
200  
mW (Tamb=25)  
2. 30¡ À0. 05  
Collector current  
ICM:  
500  
40  
mA  
V
Collector-base voltage  
V(BR)CBO  
:
Operating and storage junction temperature range  
Unit: mm  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=100µA, IE=0  
Ic=1mA, IB=0  
MIN  
40  
32  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
IE=100µA, IC=0  
µA  
µA  
VCB=20V, IE=0  
1
1
IEBO  
Emitter cut-off current  
VEB=4V, IC=0  
hFE(1)  
DC current gain  
V
CE=3V, IC=10mA  
82  
390  
0.4  
VCE(sat)  
V
Collector-emitter saturation voltage  
Transition frequency  
IC=100mA, IB=10mA  
MHz  
pF  
fT  
VCE=5V, IC=20mA, f=100MHz  
250  
6
Cob  
Collector output capacitance  
V
CB=10V, IE=0, f=1MHz  
CLASSIFICATION OF hFE(1)  
Rank  
P
Q
R
Range  
82-180  
120-270  
180-390  
Marking  
CP  
CQ  
CR  
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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