Datasheet > 2SC4096

2SC4096

更新时间： 2024-11-17 23:20:19

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数据手册

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2SC4096 数据手册

Power Transistors

2SC4096

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Unit: mm

φ 3.3±0.2

5.0±0.3

20.0±0.5

3.0

Features

High-speed switching

■

●

High collector to base voltage V_CBO

●

Wide area of safe operation (ASO)

●

1.5

Satisfactory linearity of foward current transfer ratio h_FE

1.5

2.0±0.3

2.7±0.3

3.0±0.3

Absolute Maximum Ratings (T =25˚C)

■

1.0±0.2

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

0.6±0.2

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1400

5.45±0.3

10.9±0.5

800

1:Base

2:Collector

3:Emitter

TOP–3L Package

I_C

Base current

I_B

150

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

3.5

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 1400V, I_E= 0

I_EBO

V_CEO

h_FE

V_EB= 7V, I_C= 0

I_C= 10mA, I_B= 0

Collector to emitter voltage

Forward current transfer ratio

800

_CE= 5V, I_C= 5A

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 5A, I_B= 1A

1.5

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

_CE= 5V, I_C= 1A, f = 1MHz

1.0

3.5

0.3

MHz

µs

I_C= 5A, I_B1= 1A, I_B2= –2A,

V_CC= 250V

µs

12 3

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