Datasheet > 晶体管 > 射频小信号双极晶体管> 2SC4094RCG

2SC4094RCG

更新时间： 2024-11-17 23:20:19

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
8页	103K
描述
TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 65MA I(C) \| SOT-143RVAR

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中文翻译

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2SC4094RCG 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4094

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC4094 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band. Low-

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This achieved by direct nitride

passivated base surface process (DNP process) which is an NEC

proprietary new fabrication technique.

(Units: mm)

+0.2

−0.3

+0.2

−0.1

2.8

1.5

FEATURES

•

NF = 1.2 dB TYP. @f = 1.0 GHz, V^CE= 8 V, I^C= 7 mA

S^21e²= 15 dB TYP. @f = 1.0 GHz, V^CE= 8 V, I^C= 20 mA

5°

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

5°

1.5

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

200

T^j

150

T^stg

65 to +150

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

I^CBO

I^EBO

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

1.0

250

V^CB= 10 V, I^E= 0

V^EB= 1 V, I^C= 0

h^FE

V^CE= 8V, I^C= 20 mA

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Maximum Available Gain

Noise Figure

f^T

0.25

GHz

V^CE= 8 V, I^C= 20 mA, f = 1.0 GHz

V^CB= 10 V, I^E= 0, f = 1.0 MHz

V^CE= 8 V, I^C= 20 mA, f = 1.0 GHz

V^CE= 8 V, I^C= 7 mA, f = 1.0 GHz

C^re

0.8

2.0

S^21e

MAG

1.2

h^FEClassification

Class

Marking

h^FE

R36/RCF *

R36

R37/RCG *

R38/RCH *

R38

R37

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

Document No. P10366EJ1V1DS00 (1st edition)

Date Published March 1997 N

Printed in Japan

1987

12 3 4 5 6 7 8

中文翻译

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与2SC4094RCG相关器件

型号	品牌	获取价格	描述	数据表
2SC4094-RCG	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4094RCH	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 65MA I(C) \| SOT-143RVAR
2SC4094-RCH	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4094-RCH-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
2SC4095	RENESAS	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
2SC4095(NE68039E)	ETC	获取价格	Discrete
2SC4095-R46	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-R47	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4095-R47-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil

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