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2SC4094-RCH-A

更新时间： 2024-11-18 12:59:59
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器小信号双极晶体管射频小信号双极晶体管微波光电二极管
页数 文件大小 规格书
8页 103K
描述
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-4

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2SC4094-RCH-A 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：MINIMOLD PACKAGE-4Reach Compliance Code：compliant
风险等级：5.62其他特性：LOW NOISE
最大集电极电流 (IC)：0.065 A基于收集器的最大容量：0.8 pF
集电极-发射极最大电压：10 V配置：SINGLE
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G4
JESD-609代码：e6湿度敏感等级：1
元件数量：1端子数量：4
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：10晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：9000 MHz
Base Number Matches：1

2SC4094-RCH-A 数据手册

 浏览型号2SC4094-RCH-A的Datasheet PDF文件第2页浏览型号2SC4094-RCH-A的Datasheet PDF文件第3页浏览型号2SC4094-RCH-A的Datasheet PDF文件第4页浏览型号2SC4094-RCH-A的Datasheet PDF文件第5页浏览型号2SC4094-RCH-A的Datasheet PDF文件第6页浏览型号2SC4094-RCH-A的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
2SC4094  
MICROWAVE LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
4 PINS MINI MOLD  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in  
low-noise and small signal amplifiers from VHF band to UHF band. Low-  
noise figure, high gain, and high current capability achieve a very wide  
dynamic range and excellent linearity. This achieved by direct nitride  
passivated base surface process (DNP process) which is an NEC  
proprietary new fabrication technique.  
(Units: mm)  
+0.2  
−0.3  
+0.2  
−0.1  
2.8  
1.5  
FEATURES  
•
•
NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA  
S21e 2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA  
5°  
5°  
5°  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
10  
V
V
5°  
1.5  
V
65  
mA  
mW  
C
PIN CONNECTIONS  
1. Collector  
2. Emitter  
3. Base  
4. Emitter  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
200  
Tj  
150  
Tstg  
65 to +150  
C
ELECTRICAL CHARACTERISTICS (TA = 25 C)  
CHARACTERISTIC  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
SYMBOL  
ICBO  
IEBO  
MIN.  
TYP.  
MAX.  
UNIT  
A
TEST CONDITIONS  
1.0  
1.0  
250  
VCB = 10 V, IE = 0  
A
VEB = 1 V, IC = 0  
hFE  
50  
VCE = 8V, IC = 20 mA  
Gain Bandwidth Product  
Feed-Back Capacitance  
Insertion Power Gain  
Maximum Available Gain  
Noise Figure  
fT  
9
0.25  
15  
GHz  
pF  
VCE = 8 V, IC = 20 mA, f = 1.0 GHz  
VCB = 10 V, IE = 0, f = 1.0 MHz  
VCE = 8 V, IC = 20 mA, f = 1.0 GHz  
VCE = 8 V, IC = 20 mA, f = 1.0 GHz  
VCE = 8 V, IC = 7 mA, f = 1.0 GHz  
Cre  
0.8  
2.0  
2
S21e  
13  
dB  
MAG  
NF  
17  
dB  
1.2  
dB  
hFE Classification  
Class  
Marking  
hFE  
R36/RCF *  
R36  
R37/RCG *  
R38/RCH *  
R38  
R37  
50 to 100  
80 to 160  
125 to 250  
* Old Specification / New Specification  
Document No. P10366EJ1V1DS00 (1st edition)  
Date Published March 1997 N  
Printed in Japan  
©
1987  
12345678

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