Datasheet > 2SC3931C

2SC3931C

更新时间： 2024-11-20 23:20:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	69K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 15MA I(C) \| TO-236

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中文翻译

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数据手册

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2SC3931C 数据手册

Transistor

2SC3931

Silicon NPN epitaxial planer type

For high-frequency amplification

Unit: mm

2.1±0.1

0.425

1.25±0.1

0.425

Features

■

●

Optimum for RF amplification of FM/AM radios.

●

High transition frequency f_T.

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

0.2±0.1

1:Base

˚C

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

Marking symbol : U

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

typ

max

260

Unit

Collector to base voltage

Emitter to base voltage

Forward current transfer ratio

Base to emitter voltage

Transition frequency

I_C= 10µA, I_E= 0

V_EBO

I_E= 10µA, I_C= 0

h_FE

V_CB= 6V, I_E= –1mA

V_BE

f_T

V_CB= 6V, I_E= 1mA

0.72

650

0.8

MHz

V_CB= 6V, I_E= –1mA, f = 200MHz

V_CE= 6V, I_C= 1mA, f = 10.7MHz

V_CB= 6V, I_E= –1mA, f = 100MHz

450

Common emitter reverse transfer capacitance C_re

Power gain

Noise figure

3.3

^*h_FERank classification

Rank

h_FE

65 ~ 160

100 ~ 260

Marking Symbol

12 3 4

中文翻译

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与2SC3931C相关器件

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2SC3931D	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 15MA I(C) \| TO-236
2SC3931G	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, High Frequency Band, Silicon,
2SC3931G-C	PANASONIC	获取价格	暂无描述
2SC3931G-D	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, High Frequency Band, Silicon,
2SC3931H	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, Very High Frequency Band, Sili
2SC3932	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)
2SC3932G-T	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, High Frequency Band, Silicon, N
2SC3932H	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
2SC3932S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 50MA I(C) \| SC-70
2SC3932T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 50MA I(C) \| SC-70