2SC3931G

更新时间： 2024-02-19 11:48:22

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
3页	59K
描述
RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, High Frequency Band, Silicon, NPN, ROHS COMPLIANT, SMINI3-F2, 3 PIN

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技术参数
数据手册

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2SC3931G 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.83
最大集电极电流 (IC)：	0.015 A	集电极-发射极最大电压：	20 V
配置：	SINGLE	最小直流电流增益 (hFE)：	40
最高频带：	VERY HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	650 MHz
Base Number Matches：	1

2SC3931G 数据手册

Transistor

2SC3931

Silicon NPN epitaxial planer type

For high-frequency amplification

Unit: mm

2.1±0.1

0.425

1.25±0.1

0.425

Features

■

●

Optimum for RF amplification of FM/AM radios.

●

High transition frequency f_T.

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

0.2±0.1

1:Base

˚C

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

Marking symbol : U

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

typ

max

260

Unit

Collector to base voltage

Emitter to base voltage

Forward current transfer ratio

Base to emitter voltage

Transition frequency

I_C= 10µA, I_E= 0

V_EBO

I_E= 10µA, I_C= 0

h_FE

V_CB= 6V, I_E= –1mA

V_BE

f_T

V_CB= 6V, I_E= 1mA

0.72

650

0.8

MHz

V_CB= 6V, I_E= –1mA, f = 200MHz

V_CE= 6V, I_C= 1mA, f = 10.7MHz

V_CB= 6V, I_E= –1mA, f = 100MHz

450

Common emitter reverse transfer capacitance C_re

Power gain

Noise figure

3.3

^*h_FERank classification

Rank

h_FE

65 ~ 160

100 ~ 260

Marking Symbol

12 3

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