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2SC3930TX PDF预览

2SC3930TX

更新时间: 2024-10-28 13:04:19
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管ISM频段放大器
页数 文件大小 规格书
3页 55K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

2SC3930TX 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.79
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

2SC3930TX 数据手册

 浏览型号2SC3930TX的Datasheet PDF文件第1页浏览型号2SC3930TX的Datasheet PDF文件第2页 
Transistor  
2SC3930  
Cre — VCE  
PG — IE  
NF — IE  
3.0  
2.5  
2.0  
24  
20  
16  
12  
8
12  
10  
8
VCE=10V  
f=100MHz  
Ta=25˚C  
VCB=6V  
f=10.7MHz  
Ta=25˚C  
f=100MHz  
Rg=50  
Ta=25˚C  
IC=3mA  
1mA  
1.5  
6
1.0  
0.5  
0
4
4
2
0
0
– 0.1  
0.1  
0.3  
1
3
10  
30  
100  
– 0.1 – 0.3  
–1  
–3  
–10 –30 –100  
– 0.3  
–1  
–3  
–10  
(
V
)
(
)
(
)
Collector to emitter voltage VCE  
Emitter current IE mA  
Emitter current IE mA  
bie — gie  
bre — gre  
bfe — gfe  
24  
0
– 0.1  
– 0.2  
– 0.3  
– 0.4  
– 0.5  
– 0.6  
0
–20  
f=10.7MHz  
10.7  
f=10.7MHz  
– 0.1mA  
–1mA  
58  
Vie=gie+jbie  
VCE=10V  
yre=gre+jbre  
VCE=10V  
100  
20  
16  
12  
8
–7mA  
100  
58  
–4mA  
–2mA  
–2mA  
100  
IE=–1mA  
58  
–40  
58  
IE=–4mA  
100  
–60  
58  
–80  
100  
4
–100  
–120  
f=10.7MHz  
8
yfe=gfe+jbfe  
VCE=10V  
0
0
16  
24  
32  
40  
– 0.5 – 0.4 – 0.3 – 0.2 – 0.1  
0
0
20  
40  
60  
80  
100  
(
)
(
)
(
)
Input conductance gie mS  
Reverse transfer conductance gre mS  
Forward transfer conductance gfe mS  
boe — goe  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
yoe=goe+jboe  
VCE=10V  
IE=–1mA  
100  
58  
f=10.7MHz  
0.1  
0
0.2  
0.3  
0.4  
0.5  
)
(
Output conductance goe mS  
3

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