Datasheet > 2SC3930VC(SOT-323)

2SC3930VC(SOT-323)

更新时间： 2024-01-16 22:19:34

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2SC3930VC(SOT-323) 技术参数

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2SC3930VC(SOT-323) 数据手册

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

SOT-323

2SC3930

TRANSISTOR (NPN)

FEATURES

For high-frequency Amplification Complementary to 2SA1532

Optimum for RF amplification of FM/AM radios

High transition frequency f_T

1.BASE

2.EMITTER

3.COLLECTOR

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

℃

P_C

150

-55-150

T_J

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100μA, I_E=0

I_C= 100μA, I_B=0

I_E= 100μA, I_C=0

V_CB=10V,I_E=0

0.1

220

μA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=10V,I_C=1mA

_CE=10V,I_E=1mA,

f=200MHZ

V_CB=10V,I_C=1mA,

Transition frequency

f_T

150

MHz

Common emitter reverse transfer

capacitance

Cre

1.5

f=10.7MHZ

Noise figure

Z_rb

V_CB=10V,I_C=1mA, f=5MHz

Reverse transfer impedance

V_CB=10V,I_C=1mA, f=2MHz

Ω

CLASSIFICATION OF h^FE

(1)

110-220

Marking

Range

70-140

12 3

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