型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3649 | TYSEMI |
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Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity | |
2SC3649 | SANYO |
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High-Voltage Switching Applications | |
2SC3649 | KEXIN |
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NPN Transistors | |
2SC3649_15 | KEXIN |
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NPN Transistors | |
2SC3649-HF_15 | KEXIN |
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NPN Transistors | |
2SC3649R | ETC |
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TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-247 | |
2SC3649-R | KEXIN |
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NPN Transistors | |
2SC3649-R-HF | KEXIN |
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NPN Transistors | |
2SC3649S | ETC |
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TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-247 | |
2SC3649-S | KEXIN |
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NPN Transistors |