Datasheet > 2SC3650

2SC3650

更新时间： 2024-10-31 14:54:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	2277K
描述
SOT-89-3L

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中文翻译

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数据手册

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2SC3650 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SC3650 TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER



Small Flat Package

High DC Current Gain

Low V_CE(sat)

Large Current Capacity

APPLICATIONS



LF Amplifiers, Various Drivers, Muting Circuit

MARKING

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1.2

Collector Power Dissipation

500

℃/W

℃

P_C

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

R_θJA

T_J,T_stg

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=10µA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_B=0

I_E=10µA,I_C=0

V_CB=20V,I_E=0

0.1

µA

I_EBO

V_EB=10V,I_C=0

Emitter cut-off current

h_FE(1)

V_CE=5V, I_C=500mA

V_CE=5V, I_C=10mA

I_C=500mA,I_B=10mA

VCE=10V,IC=50mA

V_CB=10V, I_E=0, f=1MHz

800

600

3200

DC current gain

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

0.5

1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

150

MHz

C_ob

Collector output capacitance

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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