Datasheet > 2SC3650

2SC3650

更新时间： 2024-11-20 06:20:11

品牌	Logo	应用领域
SECOS		晶体晶体管放大器
页数	文件大小	规格书
3页	220K
描述
NPN Silicon Epitaxial Planar Transistor

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中文翻译

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数据手册

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2SC3650 数据手册

2SC3650

NPN Silicon

Elektronische Bauelemente

Epitaxial Planar Transistor

RoHS Compliant Product

SOT-89

FEATURES

Low collector-emitter saturation voltage VCE(sat)

High DC current gain

Large current capacity

LF amp, various drivers, muting circuit

MAXIMUM RATINGS (T_A=25^oCunless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Millimeter

Min. Max.

3.00 REF.

1.50 REF.

REF.

Min.

4.4

Max.

4.6

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

1.2

0.40

1.40

0.35

0.52

1.60

0.41

P_C

500

150

-55-150

T_J

℃

5q TYP.

0.70 REF.

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25^oCunless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=10µA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=10µA, I_C=0

I_CBO

I_EBO

V_CB=20V, I_E=0

V_EB=10V, I_C=0

0.1

µA

Emitter cut-off current

h_FE1

h_FE2

V_CE(sat)

V_BE(sat)

f_T

V_CE=5V, I_C=500mA

V_CE=5V, I_C=10A

800

600

3200

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=500 A, I_B=10mA

V_CE=10V, I_C=50mA

V_CB=10V, I_E=0, f=1MHz

0.5

1.2

220

MHz

Collector output capacitance

C_ob

MARKING

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

08-May-2007 Rev. A

Page 1 of 3

12 3

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