Datasheet > 2SC3651-TD-E

2SC3651-TD-E

更新时间： 2024-11-24 20:04:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	119K
描述
TRANSISTOR,BJT,NPN,100V V(BR)CEO,200MA I(C),SOT-89

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技术参数
数据手册

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2SC3651-TD-E 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	not_compliant
风险等级：	5.84	最大集电极电流 (IC)：	0.2 A
配置：	Single	最小直流电流增益 (hFE)：	500
JESD-609代码：	e6	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1.3 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Bismuth (Sn/Bi)
Base Number Matches：	1

2SC3651-TD-E 数据手册

2SC3651

Ordering number : EN1779B

NPN Epitaxial Planar Silicon Transistor

2SC3651

High h , Low-Frequency

General-Purpose Amplifier Applications

Applications

•

LF amplifiers, various drivers, muting circuit.

Features

•

High DC current gain (h =500 to 2000).

High breakdown voltage (V ≥100V).

CEO

Low collector-to-emitter saturation voltage (V (sat)≤0.5V).

High V ≥15V).

EBO EBO

Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

120

100

CBO

CEO

EBO

200

300

500

1.3

Collector Current (Pulse)

Collector Dissipation

Mounted on a ceramic board (250mm²✕0.8mm)

Junction Temperature

Storage Temperature

Marking : CG

150

°C

Tstg

--55 to +150

Jan-2011, Rev. 0

Publication Order Number:

www.onsemi.com

Rev.0 I Page 1 of 4 I www.onsemi.com

2SC3651/D

12 3 4

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