Datasheet > 2SC3649-R

2SC3649-R

更新时间： 2024-11-25 00:58:03

品牌	Logo	应用领域
科信 - KEXIN		开关晶体管
页数	文件大小	规格书
3页	1161K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC3649-R 数据手册

SMD Type

Transistors

NPN Transistors

2SC3649

1.70 0.1

■ Features

● High breakdown voltage and large current capacity.

● Complementary to 2SA1419

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

180

160

Collector Current - Continuous

Peak Collector Current

1.5

℃

2.5

Collector Power Dissipation

Junction Temperature

500

150

Storage Temperature Range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA，RBE= ∞

= 100μA， I = 0

CB= 120 V , I = 0

EB= 4V , I =0

Min

180

160

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=500mA, I

=50mA

0.13 0.45

C=500mA, I

0.85

1.2

CE= 5V, I

= 100mA

= 10mA

100

400

DC current gain

hFE

Turn-ON Time

Storage Time

1200

See sepcified Test Circuit.

stg

Fall Time

Collector output capacitance

Transition frequency

■ Classification of hfe(1)

CB= 10V,f=1MHz

CE= 10V, I = 50mA

120

MHz

Type

Range

Marking

2SC3649-R

100-200

CER

2SC3649-S

140-280

CES

2SC3649-T

200-400

CET

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中文翻译

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