Datasheet > 2SC3650

2SC3650

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	540K
描述
SOT-89

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC3650 数据手册

2SC3650

BIPOLAR TRANSISTOR (NPN)

FEATURES

 High DC Current Gain

 Low Collector-Emitter Saturation Voltage

 Large Current Capacity

 For LF Amplifier/Various Drivers/Muting Circuit

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1.2

Collector Power Dissipation

500

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

250

150

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=10uA，I_E=0

V(BR)CBO

V(BR)CEO

V(BR)EBO

I_CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA，I_B=0

I_E=10uA，I_C=0

V_CB=20V, I_E=0

0.1

Emitter cut-off current

I_EBO

uA V_EB=10V, I_C=0

V_CE=5V, I_C=500mA

V_CE=5V, I_C=10mA

h_FE1

800

600

3200

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

0.5

1.2

I_C=500mA，I_B=10mA

150

MHz V_CE=10V, I_C=50mA

V_CB=10V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

Marking: CF

1 / 4

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

12 3 4

中文翻译

下载PDF

与2SC3650相关器件

型号	品牌	获取价格	描述	数据表
2SC3650(SOT-89-3L)	CJ	获取价格	Transistor
2SC3650_11	SECOS	获取价格	1.2 A , 30 V NPN Plastic-Encapsulate Transistor
2SC3650_15	WINNERJOIN	获取价格	TRANSISTOR
2SC3651	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistors
2SC3651	TYSEMI	获取价格	High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage
2SC3651	ONSEMI	获取价格	TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
2SC3651	SANYO	获取价格	High-hFE, Low-Frequency General-Purpose Amp Applications
2SC3651_1	SANYO	获取价格	High hFE, Low-Frequency General-Purpose Amplifier Applications
2SC3651-TD-E	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,100V V(BR)CEO,200MA I(C),SOT-89
2SC3652	HITACHI	获取价格	SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER