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2SC3649S-TD-E PDF预览

2SC3649S-TD-E

更新时间: 2024-11-21 00:57:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
7页 354K
描述
Bipolar Transistor

2SC3649S-TD-E 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:7 weeks
风险等级:1.68Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):140JEDEC-95代码:TO-243AA
JESD-30 代码:R-PSSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:SINGLE晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SC3649S-TD-E 数据手册

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Ordering number : EN2007C  
2SA1419/2SC3649  
Bipolar Transistor  
http://onsemi.com  
(–)  
(–)  
(
) (  
)
160V,  
1.5A, Low V  
CE  
sat , PNP NPN Single PCP  
Features  
Adoption of FBET, MBIT processes  
High breakdown voltage and large current capacity  
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s  
( ) : 2SA1419  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
(--)180  
(--)160  
(--)6  
Unit  
V
V
CBO  
V
V
CEO  
V
V
EBO  
I
C
(--)1.5  
(--)2.5  
500  
A
Collector Current (Pulse)  
I
A
CP  
mW  
W
Collector Dissipation  
P
C
When mounted on ceramic substrate (250mm2 0.8mm)  
1.5  
×
Junction Temperature  
Storage Temperature  
Tj  
150  
C
°
°
Tstg  
--55 to +150  
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Product & Package Information  
Package Dimensions  
unit : mm (typ)  
• Package  
: PCP  
7007B-004  
• JEITA, JEDEC  
: SC-62, SOT-89, TO-243  
Minimum Packing Quantity : 1,000 pcs./reel  
Top View  
2SA1419S-TD-E  
2SA1419S-TD-H  
2SA1419T-TD-E  
2SA1419T-TD-H  
2SC3649S-TD-E  
2SC3649S-TD-H  
2SC3649T-TD-E  
2SC3649T-TD-H  
4.5  
1.6  
Packing Type: TD  
1.5  
TD  
1
2
3
Marking  
0.4  
0.5  
0.4  
1.5  
3.0  
RANK  
RANK  
2SA1419  
2SC3649  
0.75  
Electrical Connection  
2
2
1 : Base  
2 : Collector  
3 : Emitter  
1
1
3
3
Bottom View  
PCP  
2SA1419  
2SC3649  
Semiconductor Components Industries, LLC, 2013  
August, 2013  
82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/7  

2SC3649S-TD-E 替代型号

型号 品牌 替代类型 描述 数据表
2SC3649T-TD-E ONSEMI

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