Datasheet > 2SC3649-T

2SC3649-T

更新时间： 2024-11-25 00:58:03

品牌	Logo	应用领域
科信 - KEXIN		开关晶体管
页数	文件大小	规格书
3页	1161K
描述
NPN Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC3649-T 数据手册

SMD Type

Transistors

NPN Transistors

2SC3649

1.70 0.1

■ Features

● High breakdown voltage and large current capacity.

● Complementary to 2SA1419

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

180

160

Collector Current - Continuous

Peak Collector Current

1.5

℃

2.5

Collector Power Dissipation

Junction Temperature

500

150

Storage Temperature Range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA，RBE= ∞

= 100μA， I = 0

CB= 120 V , I = 0

EB= 4V , I =0

Min

180

160

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=500mA, I

=50mA

0.13 0.45

C=500mA, I

0.85

1.2

CE= 5V, I

= 100mA

= 10mA

100

400

DC current gain

hFE

Turn-ON Time

Storage Time

1200

See sepcified Test Circuit.

stg

Fall Time

Collector output capacitance

Transition frequency

■ Classification of hfe(1)

CB= 10V,f=1MHz

CE= 10V, I = 50mA

120

MHz

Type

Range

Marking

2SC3649-R

100-200

CER

2SC3649-S

140-280

CES

2SC3649-T

200-400

CET

www.kexin.com.cn

12 3

中文翻译

下载PDF

与2SC3649-T相关器件

型号	品牌	获取价格	描述	数据表
2SC3649-T-HF	KEXIN	获取价格	NPN Transistors
2SC3649T-TD-E	ONSEMI	获取价格	Bipolar Transistor
2SC3649T-TD-H	ONSEMI	获取价格	Bipolar Transistor
2SC3650	SANYO	获取价格	High-hFE, Low-Frequency General-Purpose Amp Applications
2SC3650	HTSEMI	获取价格	TRANSISTOR (NPN)
2SC3650	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistor
2SC3650	SECOS	获取价格	NPN Silicon Epitaxial Planar Transistor
2SC3650	TYSEMI	获取价格	High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage
2SC3650	WINNERJOIN	获取价格	TRANSISTOR (NPN)
2SC3650	CJ	获取价格	SOT-89-3L