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2SC3649 PDF预览

2SC3649

更新时间: 2024-11-20 12:32:47
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
3页 566K
描述
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity

2SC3649 数据手册

 浏览型号2SC3649的Datasheet PDF文件第2页浏览型号2SC3649的Datasheet PDF文件第3页 
Product specification  
2SC3649  
Features  
Adoption of FBET, MBIT Processes  
High Breakdown Voltage and Large Current Capacity  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
180  
Unit  
V
160  
V
6
V
Collector Current  
1.5  
A
Collector Current (Pulse)  
ICP  
2.5  
A
PC  
500  
mW  
W
Collector Power Dissipation  
PC *  
Tj  
1.5  
Jumction temperature  
150  
Storage temperature Range  
Tstg  
-55 to +150  
* Mounted on ceramic board (250 mm2 x 0.8 mm)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
IEBO  
Testconditons  
Min  
Typ  
Max  
1
Unit  
uA  
uA  
V
Collector Cut-off Current  
VCB = 120V , IE = 0  
VEB = 4V , IC = 0  
Emitter Cut-off Current  
1
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
V(BR)CBO IC = 10uA , IE = 0  
V(BR)CEO  
180  
160  
6
V
IC = 1mA , RBE =  
V(BR)EBO IE = 10uA , IC = 0  
V
VCE = 5V , IC = 100mA  
hFE  
VCE = 5V , IC = 10mA  
100  
80  
400  
DC Current Gain  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Gain-Bandwidth Product  
VCE(sat) IC = 500mA , IB = 50mA  
VBE(sat) IC = 500mA , IB = 50mA  
0.13 0.45  
V
V
0.85  
120  
14  
1.2  
fT  
VCE = 10V , IC = 50mA  
MHz  
pF  
ns  
Collector Output Capacitance  
Cob  
VCB = 10V , IE = 0 , f = 1MHz  
Turn-On Time  
Storage Time  
Fall Time  
ton  
tstg  
tf  
40  
1.2  
80  
See Test Circuit.  
us  
ns  
http://www.twtysemi.com  
1 of 3  
sales@twtysemi.com  
4008-318-123  

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