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2SC3526(H) PDF预览

2SC3526(H)

更新时间: 2024-09-17 23:20:15
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管ISM频段放大器
页数 文件大小 规格书
2页 38K
描述
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92

2SC3526(H) 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER BISMUTH COPPER
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):350 MHz
Base Number Matches:1

2SC3526(H) 数据手册

 浏览型号2SC3526(H)的Datasheet PDF文件第2页 
Transistor  
2SC3526(H)  
Silicon NPN epitaxial planer type  
For display video output  
Unit: mm  
5.9±0.2  
4.9±0.2  
Features  
High transition frequency fT.  
Small collector output capacitance Cob.  
Wide current range.  
0.7±0.1  
2.54±0.15  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
Symbol  
Ratings  
110  
Unit  
V
VCBO  
*
0.45+00..12  
0.45+00..12  
VCER  
100  
V
1.27  
1.27  
VCEO  
VEBO  
ICP  
50  
V
1:Emitter  
2:Collector  
3:Base  
EIAJ:SC–51  
TO–92L Package  
3.5  
V
1
2
3
300  
mA  
mA  
W
IC  
150  
Collector power dissipation  
Junction temperature  
Storage temperature  
*REB = 470  
PC  
1.0  
Tj  
150  
˚C  
˚C  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICEO  
Conditions  
min  
typ  
max  
Unit  
µA  
V
Collector cutoff current  
VCE = 35V, IB = 0  
10  
Collector to base voltage  
Collector to emitter voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCER  
VCEO  
VEBO  
hFE  
IC = 100µA, IE = 0  
110  
100  
50  
IC = 500µA, RBE = 470Ω  
IC = 1mA, IB = 0  
V
V
IE = 100µA, IC = 0  
3.5  
20  
V
Forward current transfer ratio  
VCE = 5V, IC = 100mA*  
IC = 150mA, IB = 15mA*  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = –110mA, f = 200MHz  
VCB = 30V, IE = 0, f = 1MHz  
Collector to emitter saturation voltage VCE(sat)  
0.5  
V
fT1  
300  
350  
3
MHz  
MHz  
pF  
Transition frequency  
fT2  
Collector output capacitance  
* Pulse measurement  
Cob  
1

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