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2SC3527 PDF预览

2SC3527

更新时间: 2024-11-26 06:20:23
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 221K
描述
Silicon NPN Power Transistor

2SC3527 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

2SC3527 数据手册

 浏览型号2SC3527的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC3527  
DESCRIPTION  
·Low Collector Saturation Voltage  
·High Collector Current  
·Good Linearity of hFE  
APPLICATIONS  
·Designed for switching regulator and high voltage  
switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base voltage  
VALUE  
500  
400  
7
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
15  
A
ICM  
25  
A
IB  
6
A
Collector Power Dissipation  
@ TC=25℃  
100  
3
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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