Datasheet > 2SC3545

2SC3545

更新时间： 2024-09-18 06:16:43

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	37K
描述
NPN Silicon Epitaxial Transistor

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数据手册

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2SC3545 数据手册

SMD Type

TransistIoCrs

NPN Silicon Epitaxial Transistor

2SC3545

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High Gain Bandwidth Procuct; fT = 2 000 MHz TYP.

Low Collector to Base Time Constant; CC rb’b = 4 ps TYP.

Low Feedback Capacitance; Cre = 0.48 pF TYP.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to Base Voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

3.0

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

150

T^j

125

Tstg

-65 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

h^FE

V^CE(sat)IC = 10 mA, IB = 1.0 mA

Testconditons

Min

Typ

100

Max

0.1

Unit

ìA

Collector Cutoff Current

DC Current Gain

VCB = 12 V, IE = 0

VCE = 10 V, IC = 5.0 mA

250

0.5

Collector Saturation Voltage

Gain Bandwidth Product

Output Capacitance

MHz

f^T

VCE = 10 V, IE =-5.0 mA

1.3

2.0

0.48

C^ob

VCB = 10 V, IE = 0, f = 1.0 MHz

1.0

Collector to Base Time Constant

C^C. rb’b VCE = 10 V, IE = -5.0 mA, f = 31.9 MHz

hFE Classification

Marking

Rank

h^FE

T42

T43

L/Q

T44

K/R

M/P

50 100

70 140

120 250

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