Transistors
2SC3526H
Silicon NPN epitaxial planar type
For display video output
Unit: mm
5.9 0.2
4.9 0.2
■ Features
• High transition frequency fT
• Small collector output capacitance (Common base, input open cir-
cuited) Cob
0.7 0.1
• Wide current range
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
110
Unit
V
+0.2
0.45
+0.2
–0.1
0.45
–0.1
Collector-base voltage (Emitter open) VCBO
(1.27)
(1.27)
Collector-emitter voltage
(Resistor between B and E)
VCER
100
V
1: Emitter
2: Collector
3: Base
1
2
3
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
50
V
V
EIAJ: SC-51
TO-92L-A1 Package
2.54 0.15
3.5
Collector current
IC
ICP
PC
Tj
150
mA
mA
W
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
300
1
150
°C
°C
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
Conditions
Min
110
100
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
IC = 100 µA, IE = 0
(Resistor
Collector-emitter voltage
between B and E)
VCER
IC = 500 µA, RBE = 470 Ω
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
VCEO
VEBO
ICEO
hFE
IC = 1 mA, IB = 0
50
V
V
IE = 100 µA, IC = 0
VCE = 35 V, IB = 0
VCE = 5 V, IC = 100 mA
3.5
10
µA
20
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 150 mA, IB = 15 mA
0.5
V
fT1
fT2
VCB = 10 V, IE = −10 mA, f = 200 MHz
VCB = 10 V, IE = −110 mA, f = 200 MHz
VCB = 30 V, IE = 0, f = 1 MHz
300
350
3
MHz
Collector output capacitance
Cob
pF
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJC00133BED
1