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2SC3528 PDF预览

2SC3528

更新时间: 2024-11-23 06:20:23
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 220K
描述
isc Silicon NPN Power Transistor

2SC3528 数据手册

 浏览型号2SC3528的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC3528  
DESCRIPTION  
·Low Collector Saturation Voltage  
·High Collector Current  
·Good Linearity of hFE  
APPLICATIONS  
·Designed for switching regulator and high voltage  
switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base voltage  
VALUE  
500  
40
7
UNIT  
V
V
V
A
A
Collector Current-Continuous  
Base Current-Continuous  
20  
IB  
6
Collector Power Dissipation  
@ TC=25℃  
125  
3
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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