Datasheet > 2SC2881

2SC2881

更新时间： 2024-11-27 07:30:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管放大器
页数	文件大小	规格书
1页	334K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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2SC2881 数据手册

2SC2881

SOT-89-3L

TRANSISTOR (NPN)

FEATURES

1. BASE

Small Flat Package

2. COLLECTOR

3. EMITTER

High Transition Frequency

High Voltage

Complementary to 2SA1201

APPLICATIONS

Power Amplifier and Voltage Amplifier

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

120

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

120

Collector Current

800

℃/W

℃

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

120

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_C=1mA,I_E=0

I_C=10mA,I_B=0

I_E=1mA,I_C=0

V_CB=120V,I_E=0

V_EB=5V,I_C=0

0.1

240

µA

I_EBO

DC current gain

h_FE

V_CE=5V, I_C=100mA

I_C=500mA,I_B=50mA

V_CE=5V, I_C=0.5A

V^CE=5V,I^C=100mA

V_CB=10V, I_E=0, f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

f_T

120

MHz

Transition frequency

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

RANK

RANGE

80–160

CO1

120–240

CY1

MARKING

JinYu

semiconductor

www.htsemi.com

中文翻译

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与2SC2881相关器件

型号	品牌	获取价格	描述	数据表
2SC2881_04	TOSHIBA	获取价格	Voltage Amplifier Applications Power Amplifier Applications
2SC2881_15	UTC	获取价格	VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS
2SC2881_15	WINNERJOIN	获取价格	TRANSISTOR (NPN)
2SC2881A	FOSHAN	获取价格	SOT-89
2SC2881G-O-AB3-R	UTC	获取价格	Small Signal Bipolar Transistor,
2SC2881G-X-AB3-R	UTC	获取价格	VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS
2SC2881O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 800MA I(C) \| SOT-89
2SC2881-O	MCC	获取价格	NPN Silicon Power Transistors
2SC2881OTE12R	TOSHIBA	获取价格	TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
2SC2881-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C