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2SC2881-TP PDF预览

2SC2881-TP

更新时间: 2024-11-25 20:09:03
品牌 Logo 应用领域
美微科 - MCC 放大器晶体管
页数 文件大小 规格书
3页 234K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3

2SC2881-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.65
外壳连接:COLLECTOR最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):80JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SC2881-TP 数据手册

 浏览型号2SC2881-TP的Datasheet PDF文件第2页浏览型号2SC2881-TP的Datasheet PDF文件第3页 
M C C  
2SC2881-O  
2SC2881-Y  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
NPN Silicon  
Power Transistors  
·
With SOT-89 package  
Power amplifier applications  
Epoxy meets UL 94 V-0 flammability rating  
·
Moisure Sensitivity Level 1  
Maximum Ratings  
SOT-89  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
120  
120  
5.0  
800  
Unit  
V
V
A
K
B
V
mA  
mA  
mW  
IB  
PC  
Base Current  
Collector power dissipation  
160  
500  
1000(Note 1)  
E
C
TJ  
Junction Temperature  
Storage Temperature  
150  
R
R
TSTG  
-55 to +150  
D
Note 1: Mounted on ceramic substrate (250mm2 x 0.8t)  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
G
H
J
F
Symbol  
Parameter  
Min  
Typ.  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage*  
(IC=10mAdc, IB=0)  
Collector-Emitter Breakdown Voltage*  
(IE=1mAdc, IC=0)  
Collector-Base Cutoff Current  
(VCB=120Vdc,IE=0)  
Emitter-Base Cutoff Current  
(VEB=5.0Vdc, IC=0)  
120  
5
---  
---  
---  
---  
---  
Vdc  
Vdc  
1.BASE  
1
2
3
2.COLLECTOR  
3.EMITTER  
---  
---  
0.1  
0.1  
uAdc  
uAdc  
IEBO  
ON CHARACTERISTICS  
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ  
hFE  
VCE(sat)  
VBE  
Forward Current Transfer ratio  
80  
---  
---  
---  
---  
---  
---  
240  
1.0  
1.0  
---  
---  
Vdc  
Vdc  
MHz  
pF  
ꢀꢁꢂꢆ  
ꢁꢄꢇꢈꢃꢅꢆ  
ꢂꢉꢊꢆ  
ꢂꢂꢆ  
ꢄꢋꢌꢃꢅꢆ  
(IC=0.1Adc, VCE=5.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=0.5Adc, IB=50mAdc)  
Base-Emitter Voltage  
(IC=0.5Adc, VCE=5.0Vdc)  
Transition Frequency  
(IC=0.1Adc, VCE=5.0Vdc)  
Collector Output Capacitance  
(VCB=10V, IE=0, f=1MHz)  
ꢂꢁꢄꢆ  
ꢍꢎꢏꢐꢆ  
ꢍꢕꢔꢐꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢂꢁꢄꢆ  
ꢒꢍꢐꢓꢆ  
ꢎꢍꢔꢕꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢂꢉꢊꢆ  
ꢉꢆ  
ꢖꢆ  
ꢇꢆ  
ꢀꢆ  
ꢃꢆ  
ꢙꢆ  
ꢝꢆ  
ꢈꢆ  
ꢞꢆ  
ꢍꢎꢑꢎꢆ  
ꢍꢕꢏꢎꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢒꢍꢔꢕꢆ  
ꢎꢍꢑꢕꢆ  
ꢒꢍ25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
---  
ꢌꢛꢜꢆ  
fT  
120  
---  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
Cob  
30  
 ꢆ  
CLASSIFICATION OF HFE  
Rank  
Range  
Marking  
O
Y
120-240  
80-160  
CO1  
CY1  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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